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CREATED;VALUE=DATE-TIME:20100327T212604Z
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UID:http://calagator.org/events/1250458484
DESCRIPTION:Title: The Impact of Resonant\, Distributed\, Frequency and T
 ransmission Properties of Interconnects upon Nano-Scale VLSI Devices Rel
 iability and Functionality&#13\;\nSpeaker: Pavel Livshits\, Bar Ilan Uni
 versity\, Israel&#13\;\nWhen: Wednesday\, March 31\, 2010\, 5:30 – 7:00p
 m&#13\;\nWhere: U Portland\, Shiley Hall 124&#13\;\nDirections: See http
 ://www.up.edu/about/default.aspx?cid�07&amp\;pid177 &#13\;\nFood: Pizza 
 and Soda &#13\;\nRSVP: Requested - register at http://meetings.vtools.ie
 ee.org/meeting_registration/register/1991&#13\;\n&#13\;\nPavel Livshits 
 from Bar Ilan University\, Israel will present some of the findings of h
 is doctoral research.&#13\;\n&#13\;\nAbstract:&#13\;\n Rapid development
  of Systems-on-a-Chip (SoC) over the last decade has set tougher signal 
 integrity requirements for on-die signal and power distribution networks
 . At the same time\, only a very few experimental works have been conduc
 ted to study the properties of on-die interconnects constituting these n
 etworks. &#13\;\nIn this talk\, results obtained within the framework of
  our experimental study on global interconnects\, constructed as transmi
 ssion lines\, that carry out on-die global signaling and on interconnect
 s constituting power supply and ground grids\, are presented. In the stu
 dy we employed VLSI engineering samples typical for 90 nm and 45 nm CMOS
  technology nodes. &#13\;\nWe found that local voltage fluctuations in p
 ower supply and ground grids\, excited by on-die logic cell switching ha
 ve a resonant-like form. This finding resolves the discussed in literatu
 re controversy over the need for considering parasitic inductance i.e.\,
  the on-die power grids should be described as an RLC circuit. &#13\;\nW
 e experimentally observed and confirmed by modeling that the active elem
 ent (i.e.\, CMOS logic cell) influences the frequency properties of powe
 r supply and ground grids during its switching (as opposed to before or 
 after switching). Thus\, it was shown that frequency properties of both 
 grids are inter-related via the interconnecting active elements. &#13\;\
 nIn our experimental study was found that the impedance matching between
  CMOS driver and a driven transmission line\, and the Ohmic losses of on
 -die transmission lines\, implemented by standard metal layers of modern
  technology nodes\, play an important role in circuits’ performance. The
  study suggests that impedance mismatch results in excessive power consu
 mption and signal integrity problems. The high Ohmic losses result in a 
 significant distortion and Inter-Symbol Interference of already a few hu
 ndreds Mega-Hertz signals. &#13\;\nOur study reveals that relatively low
  but repetitive voltage oscillations on on-die power supply and ground g
 rids\, excited by logic cells switching\, may lead not only to logic fau
 lts\, as it has been regarded\, but also to an accumulated damage of VLS
 I MOSFETs. Thus\, according to Berkley Reliability Tools models simulati
 ons they accelerate the device degradation due to three main wearout mec
 hanisms\, such as Time-Dependent Dielectric Breakdown\, Negative Bias Te
 mperature Instability and Hot Carrier Injection. The similar device dama
 ge\, as the study shows\, is caused by the impedance mismatch induced di
 stortions of signals supplied to input of on-die CMOS logic cells.&#13\;
 \n&#13\;\n&#13\;\nSpeaker(s): Pavel Livshits\, &#13\;\n&#13\;\nAgenda: &
 #13\;\nWednesday\, March 31\, 2010\, 5:30 – 7:00pm&#13\;\n&#13\;\n&#13\;
 \nLocation: &#13\;\nRoom: 124&#13\;\nBldg: Shiley Hall&#13\;\nUniversity
  of Portland&#13\;\n5000 N. Willamette Blvd.&#13\;\nPortland&#13\;\n9720
 3\n\nImported from: http://calagator.org/events/1250458484
SUMMARY:IEEE - The Impact of Resonant\, Distributed\, Frequency and Trans
 mission Properties of Interconnects upon Nano-Scale VLSI Devices Reliabi
 lity and Functionality
LOCATION:University of Portland\, Shiley Hall\, Room 124: 5000 N. Willame
 tte Blvd.\, Portland Oregon 97203  US
SEQUENCE:4
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